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| (R) ESDA14V2BP6 TRANSILTM Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers Communication systems and cellular phones Video equipment This device is particularly adpated to the protection of symmetrical signals. s s s s FEATURES 4 Bidirectional TransilTM functions. ESD Protection: IEC61000-4-2 level 4 Stand off voltage: 12V MIN Low leakage current < 1A s s s s SOT-666 DESCRIPTION The ESDA14V2BP6 is a monolithic array designed to protect up to 4 lines in a bidirectional way against ESD transients. This device is ideal for applications where board space saving is required. BENEFITS High ESD protection level. High integration. Suitable for high density boards. s s s FUNCTIONAL DIAGRAM 1 3 4 6 GND: 2, 5 COMPLIES WITH THE FOLLOWING STANDARDS : s s IEC61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883E-Method 3015-7: class 3 25kV HBM (Human Body Model) March 2003 - Ed: 3A 1/5 ESDA14V2BP6 ABSOLUTE RATINGS (Tamb = 25C) Symbol VPP PPP Tj Tstg TL Top Parameter Test conditions Value 15 8 50 125 - 55 to + 150 260 - 40 to + 125 Unit kV W C C C C ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge Peak pulse power dissipation(8/20 s). Note 1 Junction temperature Storage temperature range Maximum lead temperature for soldering during 10s at 5mm for case Operating temperature range Tj initial = Tamb Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth(j-a) Parameter Junction to ambient on printed circuit on recommended pad layout Value 220 Unit C/W ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP T VF Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage tempature coefficient Forward voltage drop Slope: 1/Rd VCL VBR VRM I IRM V IPP Types IRM @ VRM max. A 1 V 12 14.2 0.1 3 min. V VBR max. V 18 @ IR Rd typ. T typ. 10 /C 5.8 -4 C max. pF @ 0V 25 mA 1 1.5 ESDA14V2BP6 2/5 ESDA14V2BP6 Fig. 1: Relative variation of peak pulse power versus initial junction temperature. PPP[Tj initial] / PPP[Tj initial = 25C] 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Fig. 2: Peak pulse power versus exponential pulse duration. PPP(W) 1000 Tj initial = 25C 100 Tj (C) 10 1 tP(s) 10 100 Fig. 3: Clamping voltage versus peak pulse current (typical values, rectangular waveform). IPP(A) 10.0 Fig. 4: Junction capacitance versus reverse voltage applied (typical values). C(pF) 30 F=1MHz VOSC=30mVRMS Tj=25C 25 20 1.0 15 10 5 VCL(V) 0.1 0 10 20 30 tP=2.5s Tj initial =25C VR(V) 0 40 0 2 4 6 8 10 12 14 Fig. 5: Relative variation of leakage current versus junction temperature (typical values). IR[Tj] / IR[Tj = 25C] 1000 100 10 Tj(C) 1 25 50 75 100 125 3/5 ESDA14V2BP6 ORDER CODE ESDA 14V2 ESD ARRAY B P6 PACKAGE: SOT-666 VBR min Bidirectional Ordering type ESDA14V2BP6 Marking A Package SOT-666 Weight 2.9 mg. Base qty 3000 Delivery mode Tape & reel 7" 4/5 ESDA14V2BP6 PACKAGE MECHANICAL DATA SOT-666 DIMENSIONS REF. Millimeters Min. A bp bp e1 e Inches Min. 0.020 0.007 0.003 0.060 0.043 Max. 0.024 0.011 0.007 0.067 0.051 Max. 0.60 0.27 0.18 1.70 1.30 1.00 0.50 0.50 0.17 0.08 1.50 1.10 c D E e D E 0.040 0.020 1.70 0.30 0.059 0.004 0.067 0.012 A Lp He e1 U He Lp 1.50 0.10 FOOT PRINT (in millimeters) 0.36 0.30 0.62 2.30 0.84 0.20 0.20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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